inchange semiconductor isc product specification isc website www.iscsemi.cn isc thyristors BT151-800 applications for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. typical applications include motor co- ntrol, industrial and domestic lighting, heating and static switching. absolute maximum ratings(t a =25 ) symbol parameter min unit v drm repetitive peak off-state voltage 800 v v rrm repetitive peak reverse voltage 800 v i t(av) average on-stage current 8 a i t(rms) rms on-state current 12 a i tsm surge non-repetitive on-state current 100 a p gm peak gate power dissipation 5 w p g(av) average gate power dissipation 0.5 w t j operating junction temperature 125 t stg storage temperature -45~150 electrical characteristics (t c =25 unless otherwise specified) symbol parameter conditions min max unit i rrm repetitive peak reverse current v rm =v rrm , v rm =v rrm , tj=125 0.02 0.5 ma i drm repetitive peak off-state current v dm =v drm , v dm =v drm , tj=125 0.02 0.5 ma v tm on-state voltage i tm = 23a 1.75 v i gt gate-trigger current v d = 12v; i t = 0.1a 8 ma v gt gate-trigger voltage v d = 12v; i t = 0.1a 1.5 v i h holding current i t = 0.1a; gate open 20 ma r th(j-c) thermal resistance junction to case 1.6 /w
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